MEAMT 2017

Keynote Speaker


Prof. Yun Hae Kim

ex-Acting President, Korea Maritime and Ocean University

President, Korean Association for Green Campus Initiative

Professor / Division of Mechanical Engineering

Founder of ACEE (Asian Conference on Engineering Education) 

Speech Title:

Creative innovation in education through idea factory

Prof. Dr. Osman ADIGUZEL

Firat University-TURKEY

Speech Title:

Crystallographic Aspects and Multivariant Nature of Martensite Structures in Shape Memory Alloys


Shape memory alloys take place in the class of smart and functional materials, due to the response of environmental and temperature changes. Shape memory alloys have a peculiar property to return to a previously defined shape on heating after deformation in low temperature product phase condition in bulk level. Shape memory effect is facilitated by martensitic transformation governed by changes in the crystalline structure of the material in the crystal and lattice level. Martensitic transformation is a diffusionless solid state phase transformation, and occurs with the cooperative movement of atoms occupying lattice sites in the materials on cooling from high temperature parent phase region. The movement of atoms is in the sub-nanometer level and confined to the interplane spacing, due to the diffusionless property. The material cycles between the deformed and original shapes in bulk level, on cooling and heating in reversible shape memory effect. Thermal induced martensite occurs as lattice twinning by means of lattice invariant shear, and the twinned martensite structures turn into detwinned structures by means stress induced martensitic transformation with deformation of the material in the martensitic condition. 

The deformed material recovers the original shape on first heating cycle in reversible and irreversible shape memory cases. The parent phase structure returns to the twinned structure on cooling below to martensite finish temperature, following first cycle, in irreversible shape memory effect. Meanwhile, the parent phase structure returns to the detwinned martensite structure in reversible shape memory effect. Shortly one can say that   the microstructural mechanisms responsible for the shape memory effect are the twinning and detwinning processes as well as martensitic transformation. Therefore, the twinning and detwinning processes have great importance in the shape memory behaviour of the materials. Martensitic transition occurs as martensite variants with inhomogeneous lattice invariant shears in two opposite directions, <110 > -type directions on the {110}-type planes of austenite matrix which is basal plane of martensite. The {110}-plane family has 6 certain lattice planes; {110}, {1 -1 0}, {101}, {1 0 -1}, {011}, {0 1 -1}; and totally 24 martensite variants is obtained by means of the lattice invariant shears on <110 > -type direction on these planes.

Copper based alloys exhibit this property in metastable β-phase region, which has bcc-based structures at high temperature parent phase field, and these structures martensiticaly turn into layered complex structures with lattice twinning process on cooling.  Lattice invariant shear is not uniform in copper based shape memory alloys, and these types of shears gives rise to the formation of layered structures, like 3R, 9R or 18R depending on the stacking sequences on the close-packed planes of the ordered lattice. The unit cell and periodicity is completed through 18 layers in case of 18R martensites.

In the present contribution, x-ray diffraction and transmission electron microscopy (TEM) and differential scanning calorimetry (DSC) studies were carried out on two copper based CuZnAl and CuAlMn alloys.

Keywords: Shape memory effect, martensitic transformation, martensite variant, lattice twinning and detwinning.


Dr. Osman Adiguzel graduated from Department of Physics, Ankara University,Turkeyin 1974 and received PhD- degree from Dicle University, Diyarbakir-Turkey in Solid State Physics. He studied at Surrey University, Guildford,UK, as a post doctoral research scientist in 1986-1987, and his studies focused on shape memory alloys. He worked as research assistant, 1975-80, at Dicle University, Diyarbakir,Turkey.  He shifted to Firat University in 1980, and became professor in 1996, and He has already been working as professor. He published over 50 papers in international and national journals; He joined over 80 conferences and symposia in international and national level as participant, invited speaker or keynote speaker with contributions of oral or poster. He served the program chair or conference chair/co-chair in some of these activities. In particular, he joined in last two years (2014 and 2015) over 10 conferences as Keynote Speaker and Conference Co-Chair. He is also Keynote Speaker and Conference Co-Chair of 8 conferences of these institutes and companies held in 2016, and he is invited as Keynote Speaker and Conference Co-Chair for 6 conferences to be held in first half of 2017.

Dr. Adiguzel served his directorate of Graduate School of Natural and Applied Sciences, Firat University in 1999-2004. He supervised 5 PhD- theses and 3 M.Sc theses. He is also Technical committee member of many conferences. He received a certificate which is being awarded to him and his experimental group in recognition of   significant contribution of 2 patterns to the Powder Diffraction File – Release 2000. The ICDD (International Centre for Diffraction Data) also appreciates cooperation of his group and interest in Powder Diffraction File.

Scientific fields of Dr. Adiguzel are as follow: Martensitic phase transformations and shape memory effect and applications to copper-based shape memory alloys, molecular dynamics simulations, alloy modeling, electron microscopy, x-ray diffraction and crystallography, differential scanning calorimetry (DSC). 


Dr.Niels Quack

Speech Title: 

MEMS Technology for Optical Switching

Abstract:Fiber-optic communication systems rely on optical switches to efficiently route optical signals. The prevalent solutions today are based on Micro-Electro-Mechanical Systems (MEMS) tilting mirrors. Emerging integrated photonics technologies such as silicon photonics have recently spurred interest for further miniaturization, promising both performance and cost advantages. In particular, using mechanical movement for the switching mechanism in Silicon Photonic MEMS switches can provide several advantages, such as scalability to high port counts, microsecond reconfiguration time, low losses and a compact footprint at the same time. In this talk, we will review MEMS technologies for fiber-optic switches, and compare traditional MEMS solutions to emerging Photonic Integrated Circuit technologies. We will discuss the design, scaling and performance of silicon photonic MEMS switches, and we will address the strategies employed for optical and electrical interfacing, including row/column actuation and high density interconnects using flip-chip bonding to an interposer, paving the way for highly integrated chip-scale, high port count, fast optical switches based on silicon photonic MEMS.


Niels Quack is currently Swiss National Science Foundation funded Assistant Professor at École Polytechnique Fédérale de Lausanne (EPFL), Switzerland. He received his Master of Science degree from EPFL in 2005, and his Doctor of Sciences degree from Eidgenössische Technische Hochschule Zürich (ETH) in 2010. From 2011 to 2015 he was Postdoctoral Researcher and Visiting Scholar at University of California, Berkeley, within the Integrated Photonics Laboratory at the Berkeley Sensor and Actuator Center. From 2014 to 2015 he was Senior MEMS Engineer at sercalo Microtechnology. In June 2015, he was awarded a Swiss National Science Foundation Professorship at EPFL. Research interests include MEMS, Optical MEMS, Tunable Optical Microsystems, Optomechanical Oscillators, Silicon Photonics, Heterogeneous Integration, LIDAR, Diamond Photonics. He has authored and co-authored more than 30 papers in leading technical journals and conferences and is a Senior Member of IEEE.

Invited Speaker


Professor Beit-Yannai

Speech Title:

Exosomes are key signaling mediators within the ocular drainage system

Purpose: Cross talk between the ocular drainage system tissues contributes to the intraocular pressure homeostasis in health and disease. The present study aims to uncover exosomes as signaling mediators in the system

Methods: Exosomes extracted from non-pigmented ciliary epithelia cell line (ODM2) were characterized for size zeta potential, miRNA and protein content using TRPS, GS-MSMS, Western Blot, microarray methods and, Image stream, confocal and electron microscopy analysis. Normal trabecular meshwork cells line (NTM5) were

incubated with ODM derived exosomes for various periods of time and the modulation of Wnt signaling pathway was analyzed.

Results: ODM2 derived exosomes were purified and detected as small rounded 50-140 nm membrane vesicles positive for classic exosome markers, FLOT1, ICAM,CD81, CD63, ANAXA5, TSG101 and Alix. Using confocal microscopy, we demonstrated time-dependent specific accumulation of ODM2-derived exosomes in NTM5 cells. ODM2 exosomes induced significant decreased phosphorylation of GKS3β and reduced β-catenin levels expression in the NTM5 cells. Endogenous expression of Wnt-regulated genes in NTM cells, Axin2 and Lif1, were significantly reduced at 2h. Furthermore, treatment of NTM5 cells with ODM2 derived exosomes resulted in a significant decrease in pan-Cadherin expression at 12h and 24h.

Conclusions: The data suggest that ODM2 cells release exosome-like vesicles and that these nanoparticles affect canonical Wnt signaling in NTM5 cells. These findings might have therapeutic relevance since canonical Wnt pathway is involved in intraocular pressure regulation.


Professor Beit-Yannai joined Ben-Gurion University school of Pharmacy and the clinical Pharmacology department as a assistance professor in 2004. In 2011 he was promoted to senior lecturer and since May 2016 he is an associate professor at the clinical biochemistry and pharmacology department. Before joining the Academy, Professor Beit-Yannai was a senior researcher in couple Biotech Company where he served as project leader and head of the Histology and Pathology laboratory.

Professor Beit-Yannai main research interests are primary open angle glaucoma (POAG) and specially intra ocular tissue signaling in the ocular outer segment. During the last years the research focuses on extracellular vesicles in general and specifically exosomes and their role as signals mediators in relevant to POAG pathology. State of the art techniques has been used and the research results were published in distinguishes scientific papers and was delivered as talks and poster in scientific meetings.

Other research interest includes oxidative stress role in human pathologies and nutrient sources with antioxidants capacities. Collaborations with agriculture scientist revealed new citrus, bell pepper and domesticated fruit trees varieties antioxidant capacities characterization.


Dr. Piyas Samanta 

Vidyasagar College for Women,INDIA 

Speech Title:

Current conduction mechanism and its impact on dielectric reliability evaluation of Si/SiC based MOS devices


A thorough analysis is presented to understand the real mechanism(s) of experimentally observed temperature and oxide electric field (Eox) variation of the gate leakage current through thermally grown silicon dioxide (SiO2) films in heavily doped n-type polysilicon (n+-polySi) gated Metal-Oxide-Semiconductor (MOS) devices on n-type Si under both positive and negative gate bias (VG). It was observed that the measured gate current density at an oxide field Eox above 6 MV/cm and at temperatures between 25 and 300 oC in silicon (Si) based MOS capacitors is comprised of Fowler-Nordheim (FN) tunneling of electrons from the accumulated n-Si (positive VG) or n+-polySi (negative VG) and Poole-Frenkel (PF) emission of trapped electrons from the localized neutral oxide electron traps located at about 1 eV below the SiO2 conduction band. This observation of two different mechanisms FN and PF operative at a given field above 5 MV/cm contradicts the widely believed single mechanism viz FN electron tunneling into thermally grown SiO2 at high electrical fields in MOS structures. Irrespective of gate bias polarities, PF mechanism however, dominates FN tunneling of electrons in the temperature range studied here. These real current conduction mechanisms are taken into account in studying hole injection and trapping in thin (7 to 12 nm) SiO2 films during positive and negative bias temperature stress at a wide range of temperatures between 25 and 300 oC. Holes were generated in the semiconducting anode material via energetic electron initiated impact ionization. Time-dependent dielectric breakdown (TDDB) under both polarity bias temperature stress has also been investigated using hole-induced breakdown concept. It was observed that hole-induced oxide breakdown obeys reciprocal field (1/E) model irrespective of stress temperatures. Both time- and charge-to-breakdown tBD and QBD follow Arrhenius law with activation energies slightly varying with oxide thickness (tox) and initial applied constant field Eox. 

We have shown that the identification of true mechanism(s) of leakage current conduction greatly impacts on the assessment of device reliability analysis particularly in projecting the device lifetime. At a given stress temperature and field, present current conduction mechanism yields shorter tBD than the widely believed FN mechanism as the primary current conduction mechanism during high-field stress. Since breakdown is a worse case analysis, the present studies gives a more conservative analysis of device lifetime prediction.


Dr. Piyas Samanta is a tenured Assistant Professor in Physics at Vidyasagar College for Women, Kolkata, India. He received his M.Sc. and Ph. D. degree in Physics from Jadavpur University, Kolkata, India in 1991 and 1999, respectively. He then joined Vidyasagar College for Women as a Lecturer in Physics in 2000. He worked at Hong Kong University of Sc. & Technology as a Research Associate from 2003 to 2005 in experimental CMOS Device Physics. His area of interest is in CMOS device Physics, High-k oxide reliability, SiC-based power devices. He has 30 research publications in peer reviewed international journals and is a reviewer of J. Appl. Phys. And Appl. Phys. Lett. Since 1998. He has visited NTUT, Taiwan in 2011, 2012 and 2014 summer for collaborative research work.  He also visited KNU, South Korea in 2010 and University of South Carolina in 2014 as a visiting scientist. Dr. Samanta presented his research paper in SSDM 2008, INFOS 2009, EDSSC 2014 and delivered keynote speech in 2nd Int. Workshop on Materials Science and Engineering at Guangzhou in 2016.

Oral Presentation Guidelines


· Oral presentations of volunteered papers are 12 minutes with 3 minutes for discussion(15 minutes in total for Q&A.)



MEAMT 2019 will be held in Shanghai, China


April. 26, 2019: Registration + Icebreaker Reception

April. 27, 2019: Opening Ceremony+KN Speech+Technical Sessions 

April. 28, 2019: One day tour or Technical Sessions+ Half day tour/Lab tours

Poster Size



Ms. Tiya T. Deng

Email: meamt@iased.org